دیتاشیت BCX52-10,115
مشخصات دیتاشیت
| نام دیتاشیت |
BCX52-10,115
|
| حجم فایل |
54.069
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
22
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Nexperia BCX52-10,115
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
1A
-
Power Dissipation (Pd):
1.3W
-
Transition Frequency (fT):
145MHz
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DC Current Gain (hFE@Ic,Vce):
63@150mA,2V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
60V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@500mA,50mA
-
Package:
SOT-89
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Manufacturer:
Nexperia
